参数资料
型号: 2SC5376F-B
元件分类: 小信号晶体管
英文描述: 400 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: ESM, 2-2HA1A, 3 PIN
文件页数: 1/5页
文件大小: 162K
代理商: 2SC5376F-B
2SC5376F
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5376F
Audio Frequency General Purpose Amplifier Applications
For Muting and Switching Applications
Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.)
@IC = 10 mA/IB = 0.5 mA
High Collector Current: IC = 400 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
400
mA
Base current
IB
50
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Equivalent Circuit (top view)
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2HA1A
F A
Type Name
hFE Classification
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