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参数资料
| 型号： | 2SC5414A-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | NP, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 48K |
| 代理商： | 2SC5414A-E |
2SC5414A
No. A1081-1/6
Features
High gain
:
S21e
2=9.5dB typ (f=1GHz).
High cut-off frequency : fT=6.7GHz typ.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
20
V
Collector-to-Emitter Voltage
VCEO
12
V
Emitter-to-Base Voltage
VEBO
2V
Collector Current
IC
100
mA
Collector Dissipation
PC
400
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=10V, IE=0A
1.0
μA
Emitter Cutoff Current
IEBO
VEB=1V, IC=0A
10
μA
DC Current Gain
hFE1VCE=5V, IC=30mA
90*
270*
hFE2VCE=5V, IC=70mA
70
Continued on next page.
* : The 2SC5414A is classified by 30mA hFE as follows :
Rank
E
F
hFE
90 to 180
135 to 270
SANYO Semiconductors
DATA SHEET
www.semiconductor-sanyo.com/network
Ordering number : ENA1081
93009AB TK IM TC-00002103
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
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instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
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customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
2SC5414A
NPN Epitaxial Planar Silicon Transistor
High-Frequency Low-Noise
Amplifier Applications
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5414A-F | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5415A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5415A-E | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5415A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5415A-F | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5414AE-AA | 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / BIP NPN 100MA 12V FT=6.7G |
| 2SC5414AF | 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Bulk |
| 2SC5414AF-AA | 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Tape and Reel |
| 2SC5415AE-TD-E | 功能描述:两极晶体管 - BJT ULAHIGH-FREQUENCY TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5415AF-TD-E | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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