参数资料
型号: 2SC5428
厂商: PANASONIC CORP
元件分类: 功率晶体管
英文描述: 25 A, 600 V, NPN, Si, POWER TRANSISTOR
封装: TOP-3E, FULL PACK-3
文件页数: 1/2页
文件大小: 150K
代理商: 2SC5428
1
Power Transistors
2SC5428
Silicon NPN triple diffusion mesa type
For horizontal deflection output
s Features
q
High breakdown voltage, and high reliability through the use of a
glass passivation layer
q
High-speed switching
q
Wide area of safe operation (ASO)
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
1500
600
5
30
25
10
100
3.5
150
–55 to +150
Unit
V
A
W
C
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Symbol
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
Conditions
VCB = 1000V, IE = 0
VCB = 1500V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 12A
IC = 12A, IB = 3A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 12A, IB1 = 2.4A, IB2 = –4.8A
min
7
typ
3
max
50
1
50
14
3
1.5
4.0
Unit
A
mA
A
V
MHz
s
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
15.5
±0.5
26.5
±0.5
22.0
±0.5
23.4
18.6
±0.5
3.3
±0.3
5.5
±0.3
2.0
0.7
±0.1
2.0
1.2
10.0
3.0
±0.3
φ3.2±0.1
4.5
5.45
±0.3
123
5.45
±0.3
1.1
±0.1
2.0
±0.2
4.0
5
°
5
°
5
°
5
°
5
°
5
°
0.7
±0.1
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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