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参数资料
| 型号： | 2SC5436-T1-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件页数： | 6/12页 |
| 文件大小： | 69K |
| 代理商： | 2SC5436-T1-A |
Data Sheet PU10104EJ01V0DS
3
2SC5436
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
°°°°C)
150
125
75
25
100
90
50
0
50
75
25
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
VCE = 2 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
20
10
40
30
0
0.5
1.0
f = 1 MHz
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
0.1
0.2
0.5
110
25
20
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
5
20
15
10
0
2.0
3.0
1.0
4.0
IB = 20 A
40 A
60 A
80 A
100 A
120 A
140 A
160 A
180 A
200 A
500
20
50
100
200
10
25
120
50
10
100
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 2 V
1 V
f = 2 GHz
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
15
10
5
12
3
5
7
10
20
0.7
30
VCE = 2 V
1 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5439(F) | 功能描述:两极晶体管 - BJT NPN 450V 8A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5443 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO-3 1500V 20A 3.5W |
| 2SC5445 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5445(F) | 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SC5446(F) | 制造商:Toshiba America Electronic Components 功能描述: |
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