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参数资料
| 型号： | 2SC5455-FB-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | MINIMOLD PACKAGE-4 |
| 文件页数： | 1/12页 |
| 文件大小： | 79K |
| 代理商： | 2SC5455-FB-A |
1998
PRELIMINARY DATA SHEET
FEATURE
Ideal for medium-output applications
High gain, low noise
Small reverse transfer capacitance
Can operate at low voltage
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
100
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
SILICON TRANSISTOR
2SC5455
NPN EPITAXIAL SILICON TRANSISTOR
4-PIN MINI MOLD
Document No. P13081EJ1V0DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
PACKAGE DIMENSIONS (in mm)
5°
0
to
0.1
0.8
2.9
±
0.2
(1.8)
(1.9)
0.95
0.85
1.1
+0.2
–0.1
0.16
+0.1
–0.06
0.4
4
1
3
2
+0.1
–0.05
2.8
+0.2
–0.3
1.5
+0.2
–0.1
0.6
+0.1
–0.05
0.4
+0.1
–0.05
0.4
+0.1
–0.05
PIN CONNECTIONS
1: Collector
2: Emitter
3: Base
4: Emitter
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
0.1
A
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
0.1
A
DC Current Gain
hFE
VCE = 3 V, IC = 30 mANote 1
75
150
Gain Bandwidth Product
fT
VCE = 3 V, IC = 30 mA, f = 2 GHz
12.0
GHz
Reverse Transfer Capacitance
Cre
VCB = 3 V, IE = 0, f = 1 MHzNote 2
0.5
0.7
pF
Insertion Power Gain
|S21e|2
VCE = 3 V, IC = 30 mA, f = 2 GHz
8.0
10.0
dB
Noise Figure
NF
VCE = 3 V, IC = 7 mA, f = 2 GHz
1.5
2.5
dB
Notes 1. Pulse measurement PW
≤ 350
s, duty cycle ≤ 2 %
2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when
emitter pin is connected to the guard pin.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
The information in this document is subject to change without notice.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5455-T1-A | 功能描述:RF TRANSISTOR NPN SOT-143 制造商:cel 系列:- 包装:带卷（TR） 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:6V 频率 - 跃迁:12GHz 噪声系数（dB，不同 f 时的典型值）:1.5dB @ 2GHz 增益:10dB 功率 - 最大值:200mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:75 @ 30mA，3V 电流 - 集电极（Ic）（最大值）:100mA 安装类型:表面贴装 封装/外壳:TO-253-4，TO-253AA 供应商器件封装:SOT-143 标准包装:3,000 |
| 2SC5458(TE16L1,NQ) | 制造商:Toshiba 功能描述:NPN 制造商:Toshiba 功能描述:NPN Cut Tape 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 400V 0.8A PW-MOLD |
| 2SC5459(Q) | 制造商:Toshiba 功能描述:NPN 400V 3A 13 TO220NIS Cut Tape |
| 2SC5459(TOJS,Q,M) | 功能描述:TRANS NPN 3A 400V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:3A 电压 - 集射极击穿（最大值）:400V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:1V @ 150mA，1.2A 电流 - 集电极截止（最大值）:100μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:20 @ 300mA，5V 功率 - 最大值:2W 频率 - 跃迁:- 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商器件封装:TO-220NIS 标准包装:1 |
| 2SC5460(Q) | 制造商:Toshiba 功能描述:NPN 制造商:Toshiba 功能描述:NPN Bulk |
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