参数资料
型号: 2SC5465
元件分类: 小信号晶体管
英文描述: 800 mA, 800 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: LEAD FREE, 2-7B1A, 3 PIN
文件页数: 2/4页
文件大小: 164K
代理商: 2SC5465
2SC5465
2005-02-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 800 V, IE = 0
100
A
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
1
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0
900
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
800
V
hFE (1)
VCE = 5 V, IC = 1 mA
10
DC current gain
hFE (2)
VCE = 5 V, IC = 0.08 A
15
Collector emitter saturation voltage
VCE (sat)
IC = 0.3 A, IB = 0.06 A
1.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 0.3 A, IB = 0.06 A
1.3
V
Rise time
tr
0.7
Storage time
tstg
3.0
Switching time
Fall time
tf
IB1 = 0.06 A, IB2 = 0.12 A,
DUTY CYCLE ≤ 1%
0.5
s
Marking
C5465
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
20 s
INPUT
IB1
IB2
OUTPUT
VCC ≈ 400 V
I B1
IB2
1.
3k
相关PDF资料
PDF描述
2SC5469 POWER TRANSISTOR
2SC5469 POWER TRANSISTOR
2SC5507 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5507-T2-FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5508-T2FB-A L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC5466(F) 制造商:Toshiba America Electronic Components 功能描述:
2SC5488A-TL-H 功能描述:两极晶体管 - BJT MEDIUM OUTPUT AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC5488-TL-E 制造商:ON Semiconductor 功能描述:BIP NPN 70MA 10V FT=7G - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / BIP NPN 70MA 10V FT=7G
2SC5490A-TL-H 功能描述:两极晶体管 - BJT BIP NPN 30MA 10V FT=8G RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC5501A-4-TR-E 功能描述:两极晶体管 - BJT MEDIUM OUTPUT AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2