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参数资料
| 型号： | 2SC5562 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.8 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-8M1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 98K |
| 代理商： | 2SC5562 |
2SC5562
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5562
Switching Regulator and High-Voltage Switching
Applications
DC-DC Converter Applications
Excellent switching times: tr = 0.7 s (max)
tf = 0.5 s (max), (IC = 0.3 A)
High breakdown voltage: VCEO = 800 V
High-speed DC-DC converter applications
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
900
V
Collector-emitter voltage
VCEO
800
V
Emitter-base voltage
VEBO
7
V
DC
IC
0.8
Collector current
Pulse
ICP
1.5
A
Base current
IB
0.4
A
Collector power dissipation
PC
1.3
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5563(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 1.5KV 0.02A 3-Pin(3+Tab) TO-220NIS |
| 2SC5565-TD-E | 制造商:SANYO 功能描述:mom 30V 5A 200 to 560 PCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 30V 5A SOT89 制造商:Sanyo 功能描述:0 |
| 2SC5566-TD-E | 功能描述:两极晶体管 - BJT BIP NPN 4A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5569-TD-E | 功能描述:两极晶体管 - BJT BIP NPN 7A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5570(Q) | 制造商:Toshiba 功能描述:NPN Cut Tape |
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