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参数资料
| 型号： | 2SC5585 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | EMT3, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 62K |
| 代理商： | 2SC5585 |
2SC5585
Transistors
!
!Packaging specifications
Package
Code
Taping
Basic ordering
unit (pieces)
hFE
2SC5585
TL
3000
Type
!
!Electrical characteristic curves
0
1
10
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR
CURRENT
:
I
C
(mA)
100
0.5
1.0
1.5
VCE = 2V
1000
Ta
=
1
25
°C
25
°C
-40
°C
2
5
20
50
200
500
1
2
5
10
20
50
100 200
500
COLLECTOR CURRENT : IC (mA)
Fig.2 DC current gain vs.
collector current
10
DC
CURRENT
GAIN
:
h
FE
1000
20
50
100
200
500
1000
Ta = 125
°C
5
2
1
VCE = 2V
25
°C
-40
°C
1
2
5
10
20
50
100
200
IC/IB = 20
1
2
5
10
20
50
100 200
500 1000
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC (mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current (
Ι )
Ta = 125
°C
500
1000
25
°C
-40
°C
1
2
5
10
20
50
100
200
Ta = 25
°C
1
2
5
10
20
50
100 200
500 1000
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current (
ΙΙ )
IC/IB = 50
500
1000
20
10
20
50
100
200
500
1000
2000
IC/IB = 20
1
2
5
10
20
50
100 200
500 1000
COLLECTOR
SATURATION
VOLTAGE
:
V
BE(sat)
(mV)
COLLECTOR CURRENT : IC (mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
Ta = -40
°C
5000
10000
25
°C
125
°C
2
1
5
10
20
50 100 200
500 1000
1
2
5
10
20
50
100
200
500
1000
Ta = 25
°C
VCE
= 2V
fT
(MH
Z
)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6
Collector output capacitance
Emitter input capacitance
vs. base voltage
Pulsed
0.2
0.1
0.5
1
2
5
10
20
50
100
1
2
5
10
20
50
100
200
500
1000
Ta = 25
°C
IE = 0A
f
= 1MHz
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance
vs collector-base voltage
Emitter input capacitance
vs emitter-base voltage
Cib
Cob
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5585TL | 功能描述:两极晶体管 - BJT NPN 12V 0.5A SOT-416 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5587(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5588 | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 800V 15A 3-Pin(3+Tab) TO-3P(HIS) 制造商:Distributed By MCM 功能描述:1700V 15A 75W Bce Toshiba Transistor 2-16E3A |
| 2SC5588(Q,M) | 功能描述:两极晶体管 - BJT Transistor NPN 1700V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5589(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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