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参数资料
| 型号： | 2SC5646 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | SSFP, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 32K |
| 代理商： | 2SC5646 |
2SC5646
No.6606-1/6
UHFtoSBandLow-Noise
Amplifier
andOSC Applications
Features
Low-noise use : NF=1.5dB typ (f=2GHz).
High cut-off frequency : fT=10GHz typ (VCE=1V).
: fT=12.5GHz typ (VCE=3V).
Low operating voltage.
High gain :
S21e2=9.5dB typ (f=2GHz).
Ultraminiature and thin flat leadless package
(1.4mm!0.8mm!0.6mm).
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
9V
Collector-to-Emitter Voltage
VCEO
4V
Emitter-to-Base Voltage
VEBO
2V
Collector Current
IC
30
mA
Collector Dissipation
PC
100
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=5V, IE=0
1.0
A
Emitter Cutoff Current
IEBO
VEB=1V, IC=0
10
A
DC Current Gain
hFE
VCE=1V, IC=5mA
100
160
Gain-Bandwidth Product
fT1VCE=1V, IC=5mA
8
10
GHz
fT2VCE=3V, IC=15mA
12.5
GHz
Output Capacitance
Cob
VCB=1V, f=1MHz
0.55
0.7
pF
Reverse Transfer Capacitance
Cre
VCB=1V, f=1MHz
0.4
pF
Forward Transfer Gain
S21e21VCE=1V, IC=5mA, f=2GHz
8
9.5
dB
S21e22VCE=3V, IC=15mA, f=2GHz
10.5
dB
Noise Figure
NF
VCE=1V, IC=3mA, f=2GHz
1.5
2.3
dB
Marking : NF
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6606
2SC5646
Package Dimensions
unit : mm
2159
[2SC5646]
72100 TS IM TA-2972
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
0.6
0.25
0.2
1.4
0.45
1
3
2
0.3
1.4
0.8
0.3
0.1
相关PDF资料 |
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| 2SC5652-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5652-T1 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5652-T1FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5653-T1EB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5646A-TL-H | 功能描述:两极晶体管 - BJT BIP NPN 30MA 4V FT=10G RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC565400L | 功能描述:TRANS NPN 20VCEO 1A SMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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| 2SC5658 | 制造商:ROHM Semiconductor 功能描述:150 MA, 50 V, NPN, SI, SMALL SIGNAL TRANSISTOR, VMT3, 3 PIN |
| 2SC5658GT2LR | 制造商:ROHM Semiconductor 功能描述:TRANSISTER 2SC5658GT2LR |
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