参数资料
型号: 2SC5663T2L
英文描述: TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 500MA I(C) | SOT-416VAR
中文描述: 晶体管|晶体管|叩| 12V的五(巴西)总裁| 500mA的一(c)|的SOT - 416VAR
文件页数: 2/2页
文件大小: 62K
代理商: 2SC5663T2L
2SC5585 / 2SC5663
Transistors
!
Packaging specifications
Package
Code
Taping
Basic ordering
unit (pieces)
hFE
2SC5663
2SC5585
T2L
8000
TL
3000
Type
!
Electrical characteristic curves
0
1
10
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR
CURRENT
:
I
C
(mA)
100
0.5
1.0
1.5
VCE = 2V
1000
Ta
=
1
25
°C
25
°C
-40
°C
2
5
20
50
200
500
1
2
5
10
20
50
100 200
500
COLLECTOR CURRENT : IC (mA)
Fig.2 DC current gain vs.
collector current
10
DC
CURRENT
GAIN
:
h
FE
1000
20
50
100
200
500
1000
Ta = 125
°C
5
2
1
VCE = 2V
25
°C
-40
°C
1
2
5
10
20
50
100
200
IC/IB = 20
1
2
5
10
20
50
100 200
500 1000
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC (mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current (
Ι )
Ta = 125
°C
500
1000
25
°C
-40
°C
1
2
5
10
20
50
100
200
Ta = 25
°C
1
2
5
10
20
50
100 200
500 1000
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current (
ΙΙ )
IC/IB = 50
500
1000
20
10
20
50
100
200
500
1000
2000
IC/IB = 20
1
2
5
10
20
50
100 200
500 1000
COLLECTOR
SATURATION
VOLTAGE
:
V
BE(sat)
(mV)
COLLECTOR CURRENT : IC (mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
Ta = -40
°C
5000
10000
25
°C
125
°C
2
1
5
10
20
50 100 200
500 1000
1
2
5
10
20
50
100
200
500
1000
Ta = 25
°C
VCE
= 2V
fT
(MH
Z
)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6
Collector output capacitance
Emitter input capacitance
vs. base voltage
Pulsed
0.2
0.1
0.5
1
2
5
10
20
50
100
1
2
5
10
20
50
100
200
500
1000
Ta = 25
°C
IE = 0A
f
= 1MHz
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance
vs collector-base voltage
Emitter input capacitance
vs emitter-base voltage
Cib
Cob
相关PDF资料
PDF描述
2SC5704 Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
2SC5930 1000 mA, 285 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD0814A Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
2SD1799 NPN Epitaxial Planar Silicon Transistor for Driver Application(驱动器应用的NPN硅外延平面型达林顿晶体管)
2SD1800 NPN Epitaxial Planar Silicon Transistor for Driver Application(驱动器应用的NPN硅外延平面型达林顿晶体管)
相关代理商/技术参数
参数描述
2SC5669 制造商:SANYO 功能描述:NPN 230V 15A 60 to 160 TO-3PB Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 230V 15A TO-247 制造商:SANYO Semiconductor Co Ltd 功能描述:NPN 230V 15A 140W 262010 Sanyo Transistor TO-247Var 制造商:Sanyo 功能描述:Trans GP BJT NPN 230V 15A 3-Pin(3+Tab) TO-3PB
2SC5674-T3-A-FB 制造商:Renesas Electronics Corporation 功能描述:
2SC5676-FB(T1) 制造商:Renesas Electronics Corporation 功能描述:
2SC5682 制造商:Sanyo Fisher 功能描述:800V 20A 95W Bce Sanyo Transistor TO-3Pmlh
2SC5686000LK 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR