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参数资料
| 型号： | 2SC5677-T3FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | LEADLESS MINIMOLD PACKAGE-3 |
| 文件页数： | 12/20页 |
| 文件大小： | 97K |
| 代理商： | 2SC5677-T3FB |
2
500 - 58 - 6
01
VO
RB
VB = 1.30 VDC
01
HAMMOND
99966
10
01
4
.7
01
RIN
RL= 470
20k
VI
3k9
820
220
1 kHZ
N/C
10
LC552
N/C
10
5
6
7
1
9
2
10
11
3
12
4
13
8
14
10
RF
VC
200k
10k
ABSOLUTE MAXIMUM RATINGS
CAUTION
CLASS 1 ESD SENSITIVITY
PIN CONNECTION
1
7
14
8
OUTPUT STAGE I/P
MIC BIAS
OUTPUT A
PREAMP I/P
PREAMP GND
DEC A
CURRENT TRIM
PREAMP O/P
V
CC1
V
CC2
OUTPUT B
FEEDBACK
DEC B
Gain
A
V
Output = 0.707 VRMS
72
75
78
dB
Total Current
I
TOT
-
0.77
1.2
mA
Total Harmonic Distortion & Noise
THD
Output = 0.707 VRMS
-
1.5
3.0
%
Input Referred Noise
-
0.9
2.5
V
Stable with Battery Resistance to
-
22
Input Impedance of Output Amplifier
18
27
36
k
Low
-
250
-
Hz
High
-
12
-
kHz
Gain Dependence on R
B
-
0.02
-
dB /
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
ELECTRICAL CHARACTERISTICS
Frequency Response (-3 dB at 1 kHz)
All parameters tested in Test Circuit Fig. 1.
Conditions: Supply voltage V
B
= 1.3 V DC, Temperature ambient = 25
°C, Frequency = 1 kHz, Noise Filter Bandwidth at 12 dB/oct (0.2 to 10kHz)
O/P GND
All resistors in ohms, all capacitors in farads unless otherwise stated.
V
I
V
O
R
IN
R
F
NOTES: 1. Test Circuit Amplifier Gain = 20 Log
10 (
/
) + 40 dB
2. Preamp Gain =
set at 35 dB
Fig. 1 Test Circuit
PARAMETER
VALUE / UNITS
Supply Voltage
3 V
Power Dissipation
200 mW
Operating Temperature
-10 to + 60
oC
Storage Temperature
-20 to + 70
oC
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5677-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5677-FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5677-FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5677-FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5677-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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