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参数资料
| 型号： | 2SC5739Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220D-A1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 235K |
| 代理商： | 2SC5739Q |
Power Transistors
1
Publication date: February 2003
SJD00288AED
2SC5739
Silicon NPN epitaxial planar type
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■ Features
High-speed switching (t
stg: storage time/tf: fall time is short)
Low collector-emitter saturation voltage V
CE(sat)
Superior forward current transfer ratio h
FE linearity
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C = 25°C ± 3°C
Note) *: Non-repetitive peak collector current
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 10 mA, IB = 060
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 60 V, IE = 0
100
A
Collector-emitter cutoff current (Base open)
ICEO
VCE
= 60 V, I
B
= 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 01
mA
Forward current transfer ratio
hFE1 *
VCE = 4 V, IC = 1 A
120
320
hFE2
VCE
= 4 V, I
C
= 3 A
40
Collector-emitter saturation voltage
VCE(sat)
IC = 3 A, IB = 0.375 A
0.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.1 A, f = 10 MHz
180
MHz
Turn-on time
ton
IC
= 1 A, Resistance loaded
0.2
0.3
s
Storage time
tstg
IB1 = 0.1 A, IB2 = 0.1 A
0.55
0.70
s
Fall time
tf
VCC = 50 V
0.10
0.15
s
Internal Connection
B
C
E
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
60
V
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
3A
Peak collector current *
ICP
6A
Collector power dissipation
PC
20
W
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Unit: mm
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
1.4±0.2
1.6±0.2
0.8±0.1
0.55±0.15
2.54±0.30
5.08±0.50
12
3
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0
±
0.5
9.9±0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder
Dip
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
120 to 250
160 to 320
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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