参数资料
型号: 2SC5746-T3FB
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: LEADLESS MINIMOLD PACKAGE-3
文件页数: 1/22页
文件大小: 94K
代理商: 2SC5746-T3FB
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10007EJ02V0DS (2nd edition)
Date Published January 2002 CP(K)
Printed in Japan
NPN SILICON RF TRANSISTOR
2SC5746
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
NEC Compound Semiconductor Devices 2001, 2002
The mark
shows major revised points.
FEATURES
Low voltage operation, low phase distortion
Ideal for OSC applications
3-pin lead-less minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5746
50 pcs (Non reel)
8 mm wide embossed taping
2SC5746-T3
10 kpcs/reel
Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
5.5
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
140
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
相关PDF资料
PDF描述
2SC5746-FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5748 16 A, 900 V, NPN, Si, POWER TRANSISTOR
2SC5750-T1FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5750-FB-A L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5751-T2FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC5748(Q) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 900V 16A 3-Pin TO-3P(LH)
2SC5750-A 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿(最大值):6V 频率 - 跃迁:15GHz 噪声系数(dB,不同 f 时的典型值):1.7dB @ 2GHz 增益:15dB 功率 - 最大值:200mW 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):75 @ 20mA,3V 电流 - 集电极(Ic)(最大值):50mA 安装类型:表面贴装 封装/外壳:SC-82A,SOT-343 供应商器件封装:- 标准包装:1
2SC5750-T1-A 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包装:带卷(TR) 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿(最大值):6V 频率 - 跃迁:15GHz 噪声系数(dB,不同 f 时的典型值):1.7dB @ 2GHz 增益:15dB 功率 - 最大值:200mW 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):75 @ 20mA,3V 电流 - 集电极(Ic)(最大值):50mA 安装类型:表面贴装 封装/外壳:SC-82A,SOT-343 供应商器件封装:SOT-343 标准包装:3,000
2SC5750-T1-A-FB 制造商:Renesas Electronics Corporation 功能描述:
2SC5751-A 功能描述:RF TRANSISTOR NPN SOT-343F 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿(最大值):6V 频率 - 跃迁:15GHz 噪声系数(dB,不同 f 时的典型值):1.7dB @ 2GHz 增益:16dB 功率 - 最大值:205mW 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):75 @ 20mA,3V 电流 - 集电极(Ic)(最大值):50mA 安装类型:表面贴装 封装/外壳:SOT-343F 供应商器件封装:- 标准包装:1