参数资料
型号: 2SC5753-FB
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: THIN, SUPER MINIMOLD PACKAGE-4
文件页数: 12/20页
文件大小: 85K
代理商: 2SC5753-FB
Data Sheet P15659EJ1V0DS
2
2SC5753
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
Junction to Ambient Resistance
Rth j-a
Note
600
°C/W
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy PCB
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
100
nA
Emitter Cut-off Current
IEBO
VBE = 1 V, IC = 0 mA
100
nA
DC Current Gain
hFE
Note 1
VCE = 3 V, IC = 30 mA
75
120
150
RF Characteristics
Gain Bandwidth Product
fT
VCE = 3 V, IC = 30 mA, f = 2 GHz
12.0
GHz
Insertion Power Gain
S21e2 VCE = 3 V, IC = 30 mA, f = 2 GHz
8.0
10.5
dB
Noise Figure
NF
VCE = 3 V, IC = 7 mA, f = 2 GHz,
ZS = Zopt
1.7
2.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 3 V, IE = 0 mA, f = 1 MHz
0.42
0.7
pF
Maximum Available Power Gain
MAG
Note 3
VCE = 3 V, IC = 30 mA, f = 2 GHz
13.5
dB
Linear Gain
GL
VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,
Pin =
5 dBm
13.0
dB
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,
Pin = 7 dBm
18.0
dBm
Collector Efficiency
ηC
VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,
Pin = 7 dBm
55
%
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
hFE CLASSIFICATION
Rank
FB
Marking
R55
hFE Value
75 to 150
(K –
√√√√ (K2 – 1) )
S21
S12
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