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参数资料
| 型号： | 2SC5758WF-TR-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 1.40 X 0.80 MM, 0.59 MM HEIGHT, MODIFIED SC-89, MFPAK-3 |
| 文件页数： | 5/5页 |
| 文件大小： | 218K |
| 代理商： | 2SC5758WF-TR-E |
2SC5758
Rev.5.00 Aug 10, 2005 page 5 of 8
10
5
4
3
2
1.5
1
.8
–2
–3
–4
–5
–10
.6
.4
.2
0
–.2
–.4
–.6
–.8
–1
–1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
0
°
30
°
60
°
90
°
120
°
150
°
180
°
–150
°
–90
°
–60
°
–30
°
–120
°
30
°
60
°
90
°
120
°
150
°
180
°
–150
°
–90
°
–60
°
–30
°
–120
°
10
5
4
3
2
1.5
1
.8
–2
–3
–4
–5
–10
.6
.4
.2
0
–.2
–.4
–.6
–.8
–1
–1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Scale: 8 / div.
Scale: 0.06 / div.
0
°
S11 Parameter vs. Frequency
S21 Parameter vs. Frequency
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
Condition: VCE = 1 V , ZO = 50
100 to 2000 MHz (100 MHz Step)
(IC = 5 mA)
(IC = 20 mA)
Condition: VCE = 1 V , ZO = 50
100 to 2000 MHz (100 MHz Step)
(IC = 5 mA)
(IC = 20 mA)
Condition: VCE = 1 V , ZO = 50
100 to 2000 MHz (100 MHz Step)
(IC = 5 mA)
(IC = 20 mA)
Condition: VCE = 1 V , ZO = 50
100 to 2000 MHz (100 MHz Step)
( IC = 5 mA)
( IC = 20 mA)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5761-T2FB | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5761 | X BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5763M | 7 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 2SC5763N | 7 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 2SC5764 | 7 A, 400 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5761-T2-A | 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT |
| 2SC5761-T2-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5773JR(TL-E) | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 6V 0.08A 3-Pin MPAK T/R |
| 2SC5778 | 制造商:Sanyo Fisher 功能描述:800V 15A 85W Bce Sanyo Transistor TO-3Pmlh |
| 2SC578 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR60V .5A .6W |
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