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参数资料
| 型号： | 2SC5761-FB-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | M04, THIN, SUPERMINI MINIMOLD PACKAGE-4 |
| 文件页数： | 8/14页 |
| 文件大小： | 75K |
| 代理商： | 2SC5761-FB-A |
Data Sheet PU10212EJ02V0DS
3
2SC5761
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
300
250
200
150
100
80
50
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy Board
(1.08 cm
2
× 1.0 mm (t) )
f = 1 MHz
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.4
0.3
0.2
0.1
02
6
8
410
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
20
25
30
35
5
10
15
01
2
3
IB = 10 A
190 A
160 A
130 A
100 A
70 A
40 A
1 000
100
10
1
0.1
10
100
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 1 V
1 000
100
10
1
0.1
10
100
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 2 V
VCE = 2 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001
0.4
0.2
0.0
0.6
0.8
1.0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5761-T2-A | 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT |
| 2SC5761-T2-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5773JR(TL-E) | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 6V 0.08A 3-Pin MPAK T/R |
| 2SC5778 | 制造商:Sanyo Fisher 功能描述:800V 15A 85W Bce Sanyo Transistor TO-3Pmlh |
| 2SC578 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR60V .5A .6W |
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