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参数资料
| 型号： | 2SC5761-T2FB-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | M04, THIN, SUPERMINI MINIMOLD PACKAGE-4 |
| 文件页数： | 7/14页 |
| 文件大小： | 75K |
| 代理商： | 2SC5761-T2FB-A |
Data Sheet PU10212EJ02V0DS
2
2SC5761
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
200
nA
Emitter Cut-off Current
IEBO
VBE = 0.5 V, IC = 0 mA
200
nA
DC Current Gain
hFE
Note 1
VCE = 2 V, IC = 5 mA
200
400
RF Characteristics
Insertion Power Gain
S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz
16.0
18.0
dB
Noise Figure
NF
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
0.9
1.1
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
0.17
0.22
pF
Maximum Stable Power Gain
MSG
Note 3
VCE = 2 V, IC = 20 mA, f = 2 GHz
18.0
20.0
dB
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 2 V, IC = 20 mA, f = 2 GHz
12.0
dBm
3rd Order Intermodulation Distortion
Output Intercept Point
OIP3
VCE = 2 V, IC = 20 mA, f = 2 GHz
22.0
dBm
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
hFE CLASSIFICATION
Rank
FB
Marking
T16
hFE Value
200 to 400
S21
S12
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