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参数资料
| 型号： | 2SC5761-T2FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | M04, THIN, SUPERMINI MINIMOLD PACKAGE-4 |
| 文件页数： | 4/5页 |
| 文件大小： | 75K |
| 代理商： | 2SC5761-T2FB |
Data Sheet PU10212EJ02V0DS
4
2SC5761
VCE = 0.5 V
IC = 20 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
35
30
25
20
15
10
5
0
0.1
1
10
MAG
MSG
|S21e|
2
VCE = 2 V
IC = 20 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
35
30
25
20
15
10
5
0
0.1
1
10
MAG
MSG
|S21e|
2
VCE = 1 V
IC = 20 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
35
30
25
20
15
10
5
0
0.1
1
10
MAG
MSG
|S21e|
2
VCE = 1 V
f = 2 GHz
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
40
35
30
25
20
15
10
5
0
10
1
100
VCE = 2 V
f = 2 GHz
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
40
35
30
25
20
15
10
5
0
10
1
100
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PDF描述 |
|---|---|
| 2SC5761 | X BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
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| 2SC5763N | 7 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 2SC5764 | 7 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 2SC5765 | 5000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5773JR(TL-E) | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 6V 0.08A 3-Pin MPAK T/R |
| 2SC5778 | 制造商:Sanyo Fisher 功能描述:800V 15A 85W Bce Sanyo Transistor TO-3Pmlh |
| 2SC578 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR60V .5A .6W |
| 2SC5784(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 20V 1.5A TSM |
| 2SC5785(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 10V 2A hfe1000 25ns PW-M |
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