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参数资料
| 型号： | 2SC5763M |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 30K |
| 代理商： | 2SC5763M |
2SC5763
No.6989-2/4
VR
RB
VCC=200V
VBE= --5V
+
50
INPUT
OUTPUT
RL
100
F
470
F
PW=20
s
IB1
D.C.
≤1%
IB2
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
hFE1VCE=5V, IC=0.8A
20*
50*
DC Current Gain
hFE2VCE=5V, IC=4A
10
hFE3VCE=5V, IC=1mA
10
Collectoe-to-Emitter Saturation Voltage
VCE(sat)
IC=4A, IB=0.8A
0.8
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=4A, IB=0.8A
1.5
V
Gain-Bandwidth Product
fT
VCE=10V, IC=0.8A
17
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
80
pF
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=1mA, IE=0
700
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=5mA, RBE=∞
400
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=1mA, IC=0
8
V
Turn-On Time
ton
IC=5A, IB1=1A, IB2=--2A, RL=40, VCC=200V
0.5
s
Storage Time
tstg
IC=5A, IB1=1A, IB2=--2A, RL=40, VCC=200V
2.5
s
Fall Time
tf
IC=5A, IB1=1A, IB2=--2A, RL=40, VCC=200V
0.25
s
Switching Time Test Circuit
0
1
2
3
4
5
6
7
8
0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
7
5
100
10
2
3
7
5
1.0
0.1
23
7
5
1.0
0.01
23
7
52
3
7
5
10
VCE=5V
IT03053
IT03054
hFE -- IC
IT03055
0
2
4
6
8
10
24
6
8
10
--40
°C
25
°C
T
a=120
°C
--40°C
25
°C
Ta=120°C
VCE=5V
IB=0
100mA
200mA
300mA
400mA
500mA
600mA
700mA
800mA
900mA
1000mA
1.0
0.1
2
3
7
5
2
3
7
5
0.01
0.1
23
7
5
1.0
0.01
23
7
52
3
7
5
10
VCE(sat) -- IC
IT03056
--40°C
25
°C
Ta=120
°C
IC / IB=5
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector
Current,
I
C
-
A
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
-
A
Collector Current, IC -- A
DC
Current
Gain,
h
FE
Collector
-to-Emitter
Saturation
V
oltage,
V
CE
(sat)
-
V
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