参数资料
型号: 2SC5823-TL
厂商: SANYO SEMICONDUCTOR CO LTD
元件分类: 小信号晶体管
英文描述: 1500 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: TP-FA, 3 PIN
文件页数: 1/4页
文件大小: 36K
代理商: 2SC5823-TL
2SC5823
No.7785-1/4
Features
High breakdown voltage.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
Ordering number : ENN7785
2SC5823
Switching Regulator Applications
Package Dimensions
unit : mm
2045B
[2SC5823]
63004CB TS IM TA-101180
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
23
4
2.3
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
unit : mm
2044B
[2SC5823]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 0.2
2.3
0.6
12
4
3
相关PDF资料
PDF描述
2SC5823-TL 1500 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5825 300 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5826TV2R 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5826TV2 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5831 2 A, 55 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
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2SC5824T100Q 功能描述:两极晶体管 - BJT NPN 60V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC5824T100R 功能描述:两极晶体管 - BJT NPN 60V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC5825 制造商:ROHM Semiconductor 功能描述:
2SC5825TLQ 功能描述:两极晶体管 - BJT 60V 3A NPN HIGH VOLT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2