- 您现在的位置：买卖IC网 > PDF目录49962 > 2SC5846G (PANASONIC CORP) 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SC5846G |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, SSSMINI3-F2, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 235K |
| 代理商： | 2SC5846G |
Transistors
1
Publication date: May 2007
SJC00399AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5846G
Silicon NPN epitaxial planar type
For general amplification
■ Features
High forward current transfer ratio h
FE
SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 Α, I
E
= 060
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 050
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 Α, IC = 07
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 20 V, I
E
= 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 10 V, IB = 0
100
A
Forward current transfer ratio
hFE
VCE = 10 V, IC = 2 mA
180
390
Collector-emitter saturation voltage
VCE(sat)
IC
= 100 mA, I
B
= 10 mA
0.1
0.3
V
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
2.2
pF
(Common base, input open circuited)
Transition frequency
fT
VCB = 10 V, IE = 2 mA, f = 200 MHz
100
MHz
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
SSSMini3-F1 Package
■ Package
Code
SSSMini3-F2
Marking Symbol: 7K
Pin Name
1. Base
2. Emitter
3. Collector
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5851 | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC5851 | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC5852QBTL-E | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5852 | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5856 | Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5846G0L | 功能描述:TRANS NPN 50VCEO 100MA SSSMINI3P RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC584800A | 功能描述:TRANS NPN 50VCEO 100MA 1006 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC5855 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR 2- 1700V 10A 50W BCE |
| 2SC5858 | 制造商:Distributed By MCM 功能描述:1700V 22A 200W Bce Toshiba Transistor 2-21F2A |
| 2SC5858(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
发布紧急采购，3分钟左右您将得到回复。