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参数资料
| 型号： | 2SC5851 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CMPAK-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 73K |
| 代理商： | 2SC5851 |
2SC5851
Rev.0, Feb. 2002, page 2 of 8
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
100
mA
Collector power dissipation
P
C*
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +125
°C
*Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm)
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
VI
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
VI
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
VI
E = 10 A, IC = 0
Collector cutoff current
I
CBO
0.5
AV
CB = 20 V, IE = 0
Emitter cutoff current
I
EBO
0.5
AV
EB = 2 V, IC = 0
DC current transfer ratio
h
FE*
1
35
200
V
CE = 12 V, IC = 2 mA
Collector to emitter saturation
voltage
V
CE(sat)
1.1
V
I
C = 10 mA, IB = 1 mA
Base to emitter voltage
V
BE
0.75
V
CE = 12 V, IC = 2 mA
Gain bandwidth product
f
T
230
MHz
V
CE = 12 V, IC = 2 mA
Collector output capacitance
C
ob
1.6
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Noise figure
NF
5.5
dB
V
CE = 6 V, IC = 1 mA,
f = 100 MHz, Rg = 100
Notes: 1. The 2SC5851 is grouped by h
FE as follows.
Grade
A
B
C
Mark
FA
FB
FC
h
FE
35 to 75
60 to 120
100 to 200
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| 2SC58630QL | 功能描述:TRANS NPN 300VCEO 70MA MINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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