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参数资料
| 型号： | 2SC5852 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CMPAK-3 |
| 文件页数： | 4/8页 |
| 文件大小： | 86K |
| 代理商： | 2SC5852 |
2SC5852
Rev.0 Feb. 2002 page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
20
V
Emitter to base voltage
V
EBO
4
V
Collector current
I
C
20
mA
Collector power dissipation
P
C*
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
*Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm)
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
4
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CEO
0.5
A
V
CE = 10 V, RBE = ∞
Emitter cutoff current
I
EBO
0.5
A
V
EB = 2 V, IC =0
DC current transfer ratio
h
FE*
1
60
200
V
CE = 6 V, IC = 1 mA
Collector to emitter saturation
voltage
V
CE(sat)
0.17
V
I
C = 20 mA, IB = 4 mA
Base to emitter voltage
V
BE
0.72
V
CE = 6 V, IC = 1 mA
Gain bandwidth product
f
T
940
MHz
V
CE = 6V, IC = 5 mA
Collector output capacitance
C
ob
0.9
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Notes: 1. The 2SC5852 is grouped by h
FE as follows.
Grade
B
C
Mark
QB
QC
h
FE
60 to 120
100 to 200
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| 2SC58630QL | 功能描述:TRANS NPN 300VCEO 70MA MINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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