参数资料
型号: 2SC5856
元件分类: 功率晶体管
英文描述: 14 A, 700 V, NPN, Si, POWER TRANSISTOR
封装: 2-16E3A, 3 PIN
文件页数: 1/6页
文件大小: 196K
代理商: 2SC5856
2SC5856
2006-11-22
1
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5856
HORIZONTAL DEFLECTION OUTPUT FOR
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage
: VCBO = 1500 V
Low Saturation Voltage
: VCE (sat) = 3 V (max)
High Speed
: tf(2) = 0.1 μs (typ.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorBase Voltage
VCBO
1500
V
CollectorEmitter Voltage
VCEO
700
V
EmitterBase Voltage
VEBO
5
V
DC
IC
14
Collector Current
Pulse
ICP
28
A
Base Current
IB
7
A
Collector Power Dissipation
PC
55
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
相关PDF资料
PDF描述
2SC5857 21 A, 750 V, NPN, Si, POWER TRANSISTOR
2SC5858 22 A, 750 V, NPN, Si, POWER TRANSISTOR
2SC5868TLR 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5874STPR 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5886 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC5858 制造商:Distributed By MCM 功能描述:1700V 22A 200W Bce Toshiba Transistor 2-21F2A
2SC5858(Q) 制造商:Toshiba America Electronic Components 功能描述:
2SC5859(Q) 制造商:Toshiba 功能描述:NPN Cut Tape
2SC58630QL 功能描述:TRANS NPN 300VCEO 70MA MINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
2SC5865 制造商:ROHM Semiconductor 功能描述:Semi, Bipolar, Transistor, ROHM, TSMT3,