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参数资料
| 型号： | 2SC6022 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 9000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 35K |
| 代理商： | 2SC6022 |
2SC6022
No.8355-1/4
Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of FBET and MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Narrow hFE range.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
40
V
Collector-to-Emitter Voltage
VCEO
30
V
Emitter-to-Base Voltage
VEBO
6V
Collector Current
IC
9A
Collector Current (Pulse)
ICP
12
A
Base Current
IB
1.2
A
Collector Dissipation
PC
1W
Tc=25
°C15
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=30V, IE=0A
0.1
A
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
0.1
A
DC Current Gain
hFE
VCE=2V, IC=500mA
250
400
Gain-Bandwidth Product
fT
VCE=10V, IC=500mA
320
MHz
Continued on next page.
Ordering number : ENN8355
62005EA MS IM TB-00001412
2SC6022
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
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| 2SC6025 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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| 2SC6033 | 2500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC6022-TL-E | 制造商:ON Semiconductor 功能描述: |
| 2SC6023 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications |
| 2SC6023-TR-E | 功能描述:TRANS NPN 3.5V 35MA MCP4 RoHS:是 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
| 2SC6024 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:UHF to C Band Low-Noise Amplifier and OSC Applications |
| 2SC6024-TL-E | 功能描述:TRANS NPN 3.5V 35MA 3SSFP RoHS:是 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
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