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参数资料
| 型号： | 2SC6037G |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, SSMINI3-F3, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 427K |
| 代理商： | 2SC6037G |
Transistors
Publication date: June 2007
SJC00403AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC6037G
Silicon NPN epitaxial planar type
For general amplication
Complementary to 2SA2161G
Features
Low collector-emitter saturation voltage VCE(sat)
SS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
15
V
Collector-emitter voltage (Base open)
VCEO
12
V
Emitter-base voltage (Collector open)
VEBO
5
V
Collector current
IC
500
mA
Peak collector current
ICP
1
A
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°
C
Storage temperature
Tstg
–55 to +125
°
C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 mA, IE = 0
15
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
12
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 mA, IC = 0
5
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
0.1
m
A
Forward current transfer ratio
hFE
VCE = 2 V, IC = 10 mA
270
680
Collector-emitter saturation voltage
VCE(sat) IC = 200 mA, IB = 10 mA
250
mV
Transition frequency
fT
VCB = 2 V, IE = –10 mA, f = 200 MHz
–10 mA, f = 200 MHz
10 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = 10 V, f = 1 MHz
4.5
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SSMini3-F3
Marking Symbol: 4U
Pin Name
1: Base
2: Emitter
3: Collector
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SC6037J0L | 功能描述:TRANS NPN 12VCEO 500MA SSMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC6040 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications |
| 2SC6040(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 410V 1A 3-Pin MSTM |
| 2SC6040(TPF2,Q,M) | 功能描述:TRANS NPN 1A 800V SC71 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:1A 电压 - 集射极击穿（最大值）:800V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:1V @ 100mA，800mA 电流 - 集电极截止（最大值）:100μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:60 @ 100mA，5V 功率 - 最大值:1W 频率 - 跃迁:- 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:SC-71 供应商器件封装:MSTM 标准包装:1 |
| 2SC6040,T2Q(J | 功能描述:TRANS NPN 1A 800V SC71 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:1A 电压 - 集射极击穿（最大值）:800V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:1V @ 100mA，800mA 电流 - 集电极截止（最大值）:100μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:60 @ 100mA，5V 功率 - 最大值:1W 频率 - 跃迁:- 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:SC-71 供应商器件封装:MSTM 标准包装:1 |
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