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参数资料
| 型号： | 2SC6093LS |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220FI(LS), 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 47K |
| 代理商： | 2SC6093LS |
2SC6093LS
No. A0274-1/4
Features
High speed.
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1500
V
Collector-to-Emitter Voltage
VCEO
800
V
Emitter-to-Base Voltage
VEBO
5V
Collector Current
IC
5A
Collector Current (Pulse)
ICP
12
A
Collector Dissipation
PC
2.0
W
Tc=25°C25
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=800V, IE=0A
10
A
Collector Cutoff Current
ICES
VCE=1500V, RBE=0
1.0
mA
Collector Sustain Voltage
VCEO(sus)
IC=100mA, IB=0A
800
V
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
40
130
mA
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=1.35A, IB=0.27A
0.1
0.3
V
VCE(sat)2
IC=2.7A, IB=0.54A
2
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=2.7A, IB=0.54A
1.5
V
DC Current Gain
hFE1VCE=5V, IC=0.5A
10
hFE2VCE=5V, IC=3A
5.3
7.5
Diode Forward Voltage
VF
IEC=4A
2
V
Fall Time
tf
IC=1.8A, IB1=0.36A, IB2=--0.72A
0.2
s
Ordering number : ENA0274
11707KC TI IM TC-00000456
SANYO Semiconductors
DATA SHEET
2SC6093LS
NPN Triple Diffused Planar Silicon Transistor
Color TV Horizontal Deflection
Output Applications
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC6094 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 2SC6094-TD-E | 功能描述:两极晶体管 - BJT HIGH-CURRENT SWITCHING RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC6095 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications |
| 2SC6095-TD-E | 功能描述:两极晶体管 - BJT BIP NPN 2.5A 80V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC6096 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications |
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