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参数资料
| 型号： | 2SC6127 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 800 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, 2-7J1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 150K |
| 代理商： | 2SC6127 |
2SC6127
2009-12-21
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6127
High Voltage Switching Applications
High Voltage Amplifier Applications
High voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
800
V
Collector-emitter voltage
VCEO
800
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
50
mA
Base current
IB
25
mA
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC6133 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High-Speed Switching Applications DC-DC Converter Applications |
| 2SC6134 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High-Speed Switching Applications DC-DC Converter Applications Strobe Applications |
| 2SC6135 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High-Speed Switching Applications DC-DC Converter Applications Strobe Applications |
| 2SC6139 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Transistor Silicon NPN Epitaxial Type |
| 2SC6139,T2F(M | 功能描述:TRANS NPN 1.5A 160V SC71 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:1.5A 电压 - 集射极击穿（最大值）:160V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:500mV @ 50mA，500mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:140 @ 100mA，5V 功率 - 最大值:1W 频率 - 跃迁:100MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:SC-71 供应商器件封装:MSTM 标准包装:1 |
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