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参数资料
| 型号： | 2SC752(G)TM |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | 2-5F1B, SC-43, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 700K |
| 代理商： | 2SC752(G)TM |
2SC752(G)TM
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC752(G)TM
Ultra High Speed Switching Applications
Computer, Counter Applications
High transition frequency: fT = 400 MHz (typ.)
Low saturation voltage: VCE (sat) = 0.3 V (max)
High speed switching time: tstg = 15 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
200
mA
Base current
IB
40
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 40 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
hFE (1)
(Note)
VCE = 1 V, IC = 10 mA
40
240
DC current gain
hFE (2)
VCE = 1 V, IC = 100 mA
20
Collector-emitter saturation voltage
VCE (sat)
IC = 20 mA, IB = 1 mA
0.3
V
Base-emitter saturation voltage
VBE (sat)
IC = 20 mA, IB = 1 mA
1.0
V
Transition frequency
fT
VCE = 10 V, IC = 10 mA
200
400
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
4
6
pF
Turn-on time
ton
70
100
Storage time
tstg
15
30
Switching time
Fall time
tf
Duty cycle <= 2%
30
70
ns
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC752GTMO | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-92 |
| 2SC752GTM-O(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC752GTMR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SC752GTMY | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-92 |
| 2SC752TM | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Ultra High Speed Switching Applications Computer, Counter Applications |
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