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参数资料
| 型号： | 2SC829B |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 |
| 中文描述： | 30 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-92-B1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 55K |
| 代理商： | 2SC829B |
1
Transistor
2SC829
Silicon NPN epitaxial planer type
For high-frequency amplification
I
Features
G
Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±
0.2
4.0
±
0.2
5
±
0
1
±
0
0.45
+0.2
0.45
+0.2
1.27
1.27
2
±
0
2.54
±
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Transition frequency
Common emitter reverse transfer capacitance
Reverse transfer impedance
Symbol
V
CBO
V
CEO
V
EBO
h
FE*
f
T
C
re
Z
rb
Conditions
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
C
= 1mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= –1mA, f = 2MHz
min
30
20
5
70
150
typ
230
1.3
max
250
1.6
60
Unit
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank
B
C
h
FE
70 ~ 160
110 ~ 250
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