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| 型号： | 2SCR514PT100 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 700 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MPT3, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 236K |
| 代理商： | 2SCR514PT100 |
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
Data Sheet
2SCR514P
Electrical characteristic curves
I
:
T
N
E
R
U
C
R
O
T
C
E
L
O
C
]
A
m[
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
)
F
p(
bi
C
:
E
C
N
A
TI
C
A
P
A
C
T
U
P
NI
R
E
T
TI
M
E
)
F
p(
b
o
C
:
E
C
N
A
TI
C
A
P
A
C
T
U
P
T
U
O
R
O
T
C
E
L
O
C
Fig.7 Emitter Input Capacitance vs.
Emitter-Base Voltage
Collector Output Capacitance vs.
Collector-Base Voltage
COLLECTOR CURRENT : IC[mA]
V
:
E
G
A
T
L
O
V
N
OI
T
A
R
U
T
A
S
R
O
T
C
E
L
O
C
E
C
]
V[)
t
as
(
COLLECTOR CURRENT : IC[mA]
:
E
G
A
T
L
O
V
N
OI
T
A
R
U
T
A
S
R
O
T
C
E
L
O
CV
CE
)[V]t
a
s(
E
F
h
:
NI
A
G
T
N
E
R
U
C
D
E
F
h
:
NI
A
G
T
N
E
R
U
C
D
EMITTER CURRENT : IE[mA]
fT
[MHz]
:
Y
C
N
E
U
Q
E
R
F
N
OI
TI
S
N
A
R
T
COLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.6 Ground Emitter Propagation
Characteristics
Fig.1 Typical Output Characteristics
IC
[A]
:
T
N
E
R
U
C
R
O
T
C
E
L
O
C
COLLECTOR CURRENT : IC[mA]
Fig.2 DC Current Gain vs.
Collector Current (
Ι )
COLLECTOR CURRENT : IC[mA]
Fig3. DC Current Gain vs.
Collector Current (
ΙΙ )
Fig.4 Collector-Emitter Saturation Voltage
vs. Collector Current (
Ι )
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current (
ΙΙ )
Fig.8 Gain Bandwidth Product vs.
Emitter Current
Fig.9 Safe Operating Area
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
BASE TO EMITTER VOLTAGE : VBE[V]
IC
:
T
N
E
R
U
C
R
O
T
C
E
L
O
C
[A
]
1
10
100
1000
0
0.5
1
1.5
1
10
100
1000
0.1
1
10
100
0.1
1
10
100
0.001
0.01
0.1
1
0.01
0.1
1
10
100
1000
10
100
1000
1
1000
100
10
1
1000
100
10
1
1000
100
10
1
1000
100
10
0
0.5
1
1.5
2
10
100
1000
10
100
1000
0.001
0.01
0.1
1
10
Cob
Cib
0.00
0.05
0.10
0.15
0.20
0.25
0.30
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
5mA
Ta=25°C
3mA
Ta=125°C
75°C
25°C
-40°C
Ta=25°C
f=1MHz
IE=0A
IC=0A
IC/IB=20
Ta=125°C
75°C
25°C
-40°C
Ta=25°C
IC/IB=50
20
10
VCE = 3V
Ta=125°C
75°C
25°C
-40°C
Ta=25°C
VCE = 5V
3V
100ms
10ms
1ms
Ta=25°C
VCE=10V
Single pulse
DC Ta=25°C
(Mounted on a
recommended land)
DC Ta=25°C
(Mounted on a ceramic board)
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相关代理商/技术参数 |
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|---|---|
| 2SCR514R | 制造商:ROHM 制造商全称:Rohm 功能描述:Midium Power Transistors (80V / 0.7A) |
| 2SCR514RTL | 制造商:ROHM Semiconductor 功能描述: |
| 2SCR522EB | 制造商:ROHM 制造商全称:Rohm 功能描述:General purpose transistor(20V,0.2A) |
| 2SCR522EBTL | 功能描述:TRANS NPN 20V 0.2A EMT3F 制造商:rohm semiconductor 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:200mA 电压 - 集射极击穿（最大值）:20V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:300mV @ 10mA，100mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:120 @ 1mA，2V 功率 - 最大值:150mW 频率 - 跃迁:400MHz 安装类型:表面贴装 封装/外壳:SC-89，SOT-490 供应商器件封装:EMT3F 标准包装:1 |
| 2SCR522M | 制造商:ROHM 制造商全称:Rohm 功能描述:General purpose transistor(20V,0.2A) |
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