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参数资料
| 型号： | 2SD0639S |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | M-A1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 180K |
| 代理商： | 2SD0639S |
549
Transistor
2SD0638, 2SD0639 (2SD638, 2SD639)
Silicon NPN epitaxial planar type
For medium-power general amplification
Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644)
s Features
q
Low collector to emitter saturation voltage VCE(sat).
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
M-A1 Package
6.9±0.1
2.5±0.1
(1.0)
(1.5)
(0.85)
0.45±0.05
0.55±0.1
(2.5)
21
3
R 0.7
R 0.9
(0.4)
3.5
±0.1
4.5
±0.1
4.1
±0.2
2.4
±0.2
1.25
±0.05
2.0
±0.2
1.0
±0.1
(1.5)
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
30
60
25
50
7
1
0.5
600
150
–55 ~ +150
Unit
V
A
mW
C
2SD0638
2SD0639
2SD0638
2SD0639
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE1
*1
hFE2
VCE(sat)
fT
Cob
Conditions
VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10A, IE = 0
IC = 2mA, IB = 0
IE = 10A, IC = 0
VCE = 10V, IC = 10mA
VCE = 10V, IC = 500mA
*2
IC = 300mA, IB = 30mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
30
60
25
50
7
85
40
typ
160
90
0.35
200
6
max
0.1
1
340
0.6
15
Unit
A
V
MHz
pF
*1h
FE1 Rank classification
Rank
Q
R
S
hFE1
85 ~ 170
120 ~ 240
170 ~ 340
*2 Pulse measurement
2SD0638
2SD0639
2SD0638
2SD0639
Note.) The Part numbers in the Parenthesis show conventional
part number.
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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PDF描述 |
|---|---|
| 2SD0638Q | 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD0638R | 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD639Q | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD655-D | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD655-E | SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD0662 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For High Breakdown Voltage General Amplification |
| 2SD0662(2SD662) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:小信号デバイス － 小信号トランジスタ － 汎用低周波増幅 |
| 2SD0662/2SD0662B(2SD662/2SD662B) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SD0662. 2SD0662B (2SD662. 2SD662B) - NPN Transistor |
| 2SD0662B | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For High Breakdown Voltage General Amplification |
| 2SD0662B(2SD662B) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:小信号デバイス － 小信号トランジスタ － 汎用低周波増幅 |
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