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参数资料
| 型号： | 2SD0874AQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, MINIP3-F1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 239K |
| 代理商： | 2SD0874AQ |
Transistors
1
Publication date: November 2002
SJC00197CED
2SD0874, 2SD0874A (2SD874, 2SD874A)
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A)
■ Features
Large collector power dissipation P
C
Low collector-emitter saturation voltage V
CE(sat)
Mini power type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings T
a = 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
4.5±0.1
3.0±0.15
45
2.6
±
0.1
0.4
max.
1.6±0.2
1.5±0.1
4.0
2.5
±
0.1
3
+0.25 –0.20
1.0
+0.1 –0.2
0.5±0.08
0.4±0.04
0.4±0.08
12
3
1.5±0.1
3
Unit: mm
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Marking Symbol:
2SD0874: Z
2SD0874A: Y
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD0874
VCBO
30
V
(Emitter open)
2SD0874A
60
Collector-emitter voltage 2SD0874
VCEO
25
V
(Base open)
2SD0874A
50
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SD0874
VCBO
IC = 10 A, IE = 030
V
(Emitter open)
2SD0874A
60
Collector-emitter voltage
2SD0874
VCEO
IC = 2 mA, IB = 025
V
(Base open)
2SD0874A
50
Emitter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
A
Forward current transfer ratio *
1
hFE1 *
2
VCE = 10 V, IC = 500 mA
85
340
hFE2
VCE
= 5 V, I
C
= 1 A
50
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 500 mA, IB = 50 mA
0.2
0.4
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = 500 mA, IB = 50 mA
0.85
1.2
V
Transition frequency
fT
VCB
= 10 V, I
E
= 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
20
pF
(Common base, input open circuited)
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
Note) The part numbers in the parenthesis show conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SD874AQ | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD874S | 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD0874AS | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD0874AR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SD0874AS | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SD0874GRL | 功能描述:TRANS NPN 50VCEO 1A MINI-PWR RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD0874Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SD0874R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
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