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参数资料
| 型号： | 2SD0875R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, MINIP3-F1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 238K |
| 代理商： | 2SD0875R |
Transistors
1
Publication date: November 2002
SJC00198CED
2SD0875 (2SD875)
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SB0767 (2SB767)
■ Features
Large collector power dissipation P
C
High collector-emitter voltage (Base open) V
CEO
Mini power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
80
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
0.5
A
Peak collector current
ICP
1A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 A, IE = 080
V
Collector-emitter voltage (Base open)
VCEO
IC
= 100 A, I
B
= 080
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
A
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 150 mA
130
330
hFE2
VCE = 50 V, IC = 500 mA
50
100
Collector-emitter saturation voltage
VCE(sat)
IC = 300 mA, IB = 30 mA
0.2
0.4
V
Base-emitter saturation voltage
VBE(sat)
IC
= 300 mA, I
B
= 30 mA
0.85
1.2
V
Transition frequency
fT
VCB = 10 V, IE = 50 mA, f = 200 MHz
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
11
20
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
4.5±0.1
3.0±0.15
45
2.6
±
0.1
0.4
max.
1.6±0.2
1.5±0.1
4.0
2.5
±
0.1
3
+0.25 –0.20
1.0
+0.1 –0.2
0.5±0.08
0.4±0.04
0.4±0.08
12
3
1.5±0.1
3
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Rank
R
S
hFE1
130 to 220
185 to 330
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
Note) The part number in the parenthesis shows conventional part number.
Marking Symbol: X
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD0875S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-243 |
| 2SD0946 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Low-Frequency Amplification |
| 2SD0946(2SD946) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:パワーデバイス － パワートランジスタ － その他 |
| 2SD0946A | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Low-Frequency Amplification |
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