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参数资料
| 型号： | 2SD0946AQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封装： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 203K |
| 代理商： | 2SD0946AQ |
Power Transistors
1
Publication date: August 2008
SJD00164DED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD0946A, 2SD0946B
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
■ Features
Forward current transfer ratio h
FE is designed high, which is appro-
priate to the driver circuit of motors and printer hammer.
A shunt resistor is omitted from the driver.
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD0946A
VCBO
60
V
(Emitter open)
2SD0946B
100
Collector-emitter voltage 2SD0946A
VCEO
50
V
(Base open)
2SD0946B
80
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power dissipation
PC
1.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SD0946A
VCBO
IC = 100 A, IE = 060
V
(Emitter open)
2SD0946B
100
Collector-emitter voltage
2SD0946A
VCEO
IC = 1 mA, IB = 050
V
(Base open)
2SD0946B
80
Emitter-base voltage (Collector open)
VEBO
IE
= 100 A, I
C
= 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 25 V, IE = 0
0.1
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 4 V, IC = 0
0.1
A
Forward current transfer ratio *
1, 2
hFE
VCE
= 10 V, I
C
= 1 A
4 000
40 000
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 1 A, IB = 1 mA
1.8
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = 1 A, IB = 1 mA
2.2
V
Transition frequency
fT
VCB
= 10 V, I
E
= 50 mA, f = 200 MHz
150
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
■ Package
Code
TO-126B-A1
Pin Name
1: Emitter
2: Collector
3: Base
■ Internal Connection
B
≈ 200
C
E
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD0946AR | 功能描述:TRANS NPN 50VCEO 1A TO-126 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD0946AS | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 1A I(C) | TO-126 |
| 2SD0946B | 功能描述:TRANS NPN LF 80VCEO 1A TO-126 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD0946B(2SD946B) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:パワーデバイス － パワートランジスタ － その他 |
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