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参数资料
| 型号： | 2SD1012-G |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 700 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SPA, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 103K |
| 代理商： | 2SD1012-G |
2SB808/2SD1012
No.676—4/5
Main Specifications
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Note : for above-mentioned hFE rank.
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PO -- VIN
ITR08391
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THD -- PO
ITR08392
VCC=3V
RL=8
f=1kHz
VCC=3V
RL=8
f=1kHz
Output
Po
wer
,P
O
—
mW
Input Voltage, VIN — mV
T
otal
Harmonic
Distortion,
THD
—
%
Output Power, PO — mW
Sample Application Circuit : Low-voltage 3V (PO 120mW) ITL-OTL power amplifier.
Circuit configuration
For obtaining an output of more than 100mW, the middle-point voltage at the output stage and the collector voltage
of the driver transistor must be VCC/2. Therefore, the output stage is of quasi complementary configuration com-
posed of npn/npn transistors. The phase is reversed by the 2SA608 and the middle-point voltage are the output
stage and the collector voltage of the driver transistor are more to be VCC/2 so that the output can be maximized.
ITR09909
3.9k
100
DS442×2
100
150
1k
270k
22
27k
15k
D1
D2
R1
100F
6.3V
10
6.3V
10F
6.3V
220F
6.3V
TR5
TR2
TR3
INPUT
R1 : Used control idele current
For R1=820. use rank F for [TR4, 5(2SD1012)]
For R1=680. use rank G for [TR4, 5(2SD1012)]
+
330p
TR4
VCC=3V
SP
8
TR1
*
2SC536E, F
2SC536E
2SA608E, F
2SD1012F, G×2
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB808G | 700 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1012G | 700 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1012H | 700 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1012-H | 700 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1012F | 700 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1012G-SPA | 功能描述:两极晶体管 - BJT BIP NPN 0.7A 15V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1012G-SPA-AC | 功能描述:两极晶体管 - BJT BIP NPN 0.7A 15V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1012H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 700MA I(C) | SPAK |
| 2SD1015 | 制造商:SONY 制造商全称:Sony Corporation 功能描述:SILICON NPN LEC SYMMETRY TRANSISTOR |
| 2SD1020 | 制造商:NEC 制造商全称:NEC 功能描述:NPN SILICON TRANSISTOR |
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