参数资料
型号: 2SD1060L-R-TN3-T
厂商: UNISONIC TECHNOLOGIES CO LTD
元件分类: 功率晶体管
英文描述: 5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-252
封装: LEAD FREE PACKAGE-3
文件页数: 4/5页
文件大小: 103K
代理商: 2SD1060L-R-TN3-T
2SD1060
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
4 of 5
www.unisonic.com.tw
QW-R208-023.C
TYPICAL CHARACTERISTICS
Collector Current vs. Collector-to-Emitter Voltage
Collector-to-Emitter Voltage, VCE (V)
0
0.4
0.8
1.2
1.6
2.0
2.4
Co
lle
cto
rC
u
rre
nt,
I C
(A)
0
2
4
6
8
10
50mA
100mA
150mA
Collector Current vs. Base-to-Emitter Voltage
Base-to-Emitter Voltage, VBE (V)
0
0.2
0.4
0.6
1.0
1.2
1.4
Co
lle
ctor
Curre
nt,
I
C
(A)
0
2
4
6
8
10
VCE=2V
0.8
9
7
5
3
1
2
5
-2
0
IB=0
30
0m
A
25
0m
A
200mA
5
0
m
A
450mA
40
0m
A
35
0m
A
T
a
=
8
0
DC
C
u
rren
tGain
,h
FE
Ta
=8
0
Collector-Emitter
Satu
ration
Volt
age,
V
CE
(SAT
)(V
)
Collector-Emitter Saturation Voltage vs.
Collector Current
Collector Current, IC (A)
0.1
0.01
10
5
2
0.1
5
3
2
23
5
2
3
5
1.0
10
23
5
2
IC/IB=20
Ta
=8
0
25℃
-20℃
5
3
2
1.0
3
C
o
llector-Emi
tter
Satu
ra
tion
Vo
ltag
e,
V
CE(SAT
)(V)
Base-Emitter Saturation Voltage vs.
Collector Current
Collector Current, IC (A)
0.1
10
5
2
1.0
5
3
2
23
5
2
3
5
1.0
10
23
5
2
IC/IB=10
3
Base-Emitter
Satura
ti
on
Vo
ltag
e,
V
BE(SAT
)(V)
7
IC/IB=20
相关PDF资料
PDF描述
2SD1060L-R-TA3-T 5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1060L-S-TA3-T 5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1064-Q 12 A, 50 V, NPN, Si, POWER TRANSISTOR
2SD1064-S 12 A, 50 V, NPN, Si, POWER TRANSISTOR
2SB828 12 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-218
相关代理商/技术参数
参数描述
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2SD1060L-X-TA3-T 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN PLANAR SILICON TRANSISTOR