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参数资料
| 型号： | 2SD1119Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, MINIP3-F1, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 237K |
| 代理商： | 2SD1119Q |
2SD1119
2
SJC00207CED
VCE(sat) IC
VBE(sat) IC
hFE IC
PC Ta
IC VCE
IC VBE
fT IE
Cob VCB
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Copper plate at the collector
is more than 1 cm2 in area,
1.7 mm in thickness
Collector
power
dissipation
P
C
(W
)
Ambient temperature T
a (°C)
0
2.4
2.0
1.6
0.4
1.2
0.8
0
2.4
2.0
1.6
1.2
0.8
0.4
Ta
= 25°C
IB
= 7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector
current
I
C
(A
)
Collector-emitter voltage V
CE (V)
0
2.0
1.6
0.4
1.2
0.8
0
6
5
4
3
2
1
VCE
= 2 V
Ta
= 75°C
25°C
25
°C
Base-emitter voltage V
BE (V)
Collector
current
I
C
(A
)
0.01
0.1
1
10
0.001
0.01
0.1
1
10
Ta
= 75°C
25
°C
25°C
IC / IB
= 30
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (A)
0.01
0.1
1
10
0.01
0.1
1
10
100
IC / IB
= 30
Ta
= 25°C
25
°C
75
°C
Base-emitter
saturation
voltage
V
BE(sat)
(V
)
Collector current I
C (A)
0.01
0.1
1
10
0
600
500
400
300
200
100
Ta
= 75°C
25
°C
25°C
VCE
= 2 V
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
0.01
0.1
1
10
0
400
300
100
200
VCB
= 6 V
Ta
= 25°C
Transition
frequency
f
T
(MHz
)
Emitter current I
E (A)
1
10
100
0
100
80
60
40
20
IE
= 0
f
= 1 MHz
Ta
= 25°C
Collector-base voltage V
CB (V)
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).
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PDF描述 |
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| 2SD1126(K) | 10 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1126K | 10 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1127K | 10 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1133 | 4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1119-QR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1119R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1119-R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1126 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Triple Diffused |
| 2SD1126(K) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 10A I(C) | TO-220AB |
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