参数资料
型号: 2SD1133B
元件分类: 功率晶体管
英文描述: 4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封装: TO-220AB, 3 PIN
文件页数: 7/8页
文件大小: 166K
代理商: 2SD1133B
2SD1133, 2SD1134
3
TC = 25°C
IB = 0
10 mA
20
30
40
50
60
70
80
90
5
4
3
2
1
02
Collector
current
I
C
(A)
4
Collector to emitter voltage VCE (V)
8
610
Typical Output Characteristics
5
2
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0
0.6
1.0
0.2
0.8
1.4
1.2
Collector
current
I
C
(A)
Base to emitter voltage VBE (V)
0.4
T
C
=
75
°C
–25
°C
25
°C
VCE = 4 V
Typical Transfer Characteristics
1,000
500
200
100
50
20
5
10
0.01 0.02
DC
current
transfer
ratio
h
FE
0.05
2
Collector current IC (A)
0.1
0.5
5
0.2
1.0
VCE = 4 V
DC Current Transfer Ratio
vs. Collector Current
TC = 75°C
25
–25
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.2
0.01 0.02
1.0
0.05 0.1
0.5
2
5
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector current IC (A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V)
IC = 10 IB
TC = 75°C
25
–25
相关PDF资料
PDF描述
2SD1134D 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1133D 4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1134 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1133C 4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1134B 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
相关代理商/技术参数
参数描述
2SD1133C 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 4A I(C) | TO-220AB
2SD1133D 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 4A I(C) | TO-220AB
2SD1133K 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Triple Diffused
2SD1134 制造商:Hit 功能描述:2SD1134 N7D4A
2SD1134B 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-220AB