参数资料
型号: 2SD1136
元件分类: 功率晶体管
英文描述: 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封装: TO-220AB, 3 PIN
文件页数: 2/5页
文件大小: 32K
代理商: 2SD1136
2SD1136
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
200
V
Collector to emitter voltage
V
CEO
80
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
4A
Collector peak current
I
C(peak)
5A
Collector surge current
I
C(surge)
15
A
Collector power dissipation
P
C
1.8
W
P
C*
1
30
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
200
V
I
C = 1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
80
——V
I
C = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
——V
I
E = 1 mA, IC = 0
Collector cutoff current
I
CES
1.0
mA
V
CE = 150 V, RBE = 0
DC current transfer ratio
h
FE
20
V
CE = 5 V, IC = 4 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
1.5
V
I
C = 4 A, IB = 0.4 A*
1
Base to emitter saturation
voltage
V
BE(sat)
1.5
V
I
C = 4 A, IB = 0.4 A*
1
Fall time
t
f
1.0
s
I
C = 3.5 A, IB1 = 0.45 A, LB = 0
Note:
1. Pulse test.
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