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参数资料
| 型号： | 2SD1137 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 139K |
| 代理商： | 2SD1137 |
2SD2440
2006-11-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0
―
10
A
Collector cut-off current
ICER
VCE = 80 V, RBE = 50
―
5
mA
Emitter cut-off current
IEBO
VEB = 15 V, IC = 0
―
2
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
60
―
V
hFE (1)
(Note)
VCE = 5 V, IC = 0.5 A
200
―
900
DC current gain
hFE (2)
VCE = 5 V, IC = 5 A
20
―
100
Collector-emitter saturation voltage
VCE (sat)
IC = 5 A, IB = 1 A
―
1.2
V
Base-emitter saturation voltage
VBE (sat)
IC = 5 A, IB = 1 A
―
2.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A
―
5
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
71
―
pF
Turn-on time
ton
―
1
2
Storage time
tstg
―
2
4
Switching time
Fall time
tf
IB1 = IB2 = 0.5 A, duty cycle ≤ 1%
―
1
3
s
Note: hFE (1) classification GR: 200 to 400, BL: 300 to 600, V: 450 to 900
Marking
Ｄ
2440
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
Part No. (or abbreviation code)
I B1
20 s
VCC = 50 V
I B2
Output
10
IB2
IB1
Input
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1138 | 2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1138D | 2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1141K | 6 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1141K | 6 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1153 | 1500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1137(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1138 | 制造商:MISCELLANEOUS 功能描述: |
| 2SD1138B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SD1138C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SD1138C(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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