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参数资料
| 型号： | 2SD1160 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 2-7B1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 164K |
| 代理商： | 2SD1160 |
2SD1160
2005-02-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SD1160
Switching Applications
Suitable for Motor Drive Applications
High DC current gain
Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA)
Built-in free wheel diode
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
DC
IC
2
Collector current
Pulse
ICP
4
A
Diode forward surge current (t = 1 s)
IFP
1
A
Ta = 25°C
1
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Equivalent Circuit
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
COLLECTOR
BASE
EMITTER
≈ 800
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PDF描述 |
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| 2SD1164-Z-T1K | 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1160_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) |
| 2SD1160O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | TO-251AA |
| 2SD1160Y | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | TO-251AA |
| 2SD1160-Y(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SD1161 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 30MA I(C) | SOT-23 |
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