参数资料
型号: 2SD1163A-E
元件分类: 功率晶体管
英文描述: 7 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封装: TO-220AB, 3 PIN
文件页数: 6/9页
文件大小: 167K
代理商: 2SD1163A-E
2SD1163, 2SD1163A
2
Absolute Maximum Ratings (Ta = 25°C)
Rating
Item
Symbol
2SD1163
2SD1163A
Unit
Collector to base voltage
V
CBO
300
350
V
Collector to emitter voltage
V
CEO
120
150
V
Emitter to base voltage
V
EBO
66V
Collector current
I
C
77A
Collector peak current
I
C (peak)
10
A
Collector surge current
I
C (surge)
20
A
Collector power dissipation
P
C*
1
40
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
2SD1163
2SD1163A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector cutoff current
I
CBO
——5
———
mA
V
CB = 300 V, IE = 0
———
——5
mA
V
CB = 350 V, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
120
150
V
I
C = 10 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
6—
6—
V
I
E = 10 mA, IC = 0
DC current transfer ratio h
FE
25
25
V
CE = 5 V, IC = 5 A*
1
Collector to emitter
saturation voltage
V
CE (sat)
2.0
1.0
V
I
C = 5 A, IB = 0.5 A*
1
Base to emitter
saturation voltage
V
BE (sat)
1.2
1.2
V
I
C = 5 A, IB = 0.5 A*
1
Fall time
t
f
0.5
0.5
sI
CP = 3.5 A,
I
B1 = 0.45 A
Note:
1. Pulse test.
相关PDF资料
PDF描述
2SD1164-Z-E2 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1164-ZK-E2 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1164-ZK-E1 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1164-ZL-E1 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1164-Z 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SD1164 制造商:未知厂家 制造商全称:未知厂家 功能描述:
2SD1164-AZ 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,2A,TO-252 制造商:Renesas 功能描述:Darlington BJT
2SD1164-AZ(K) 制造商:Renesas Electronics 功能描述:NPN Bulk
2SD1164K 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT
2SD1164K-Z 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-252VAR