参数资料
型号: 2SD1199T
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 50 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: M-A1, 3 PIN
文件页数: 1/3页
文件大小: 190K
代理商: 2SD1199T
591
Transistor
2SD1199
Silicon NPN epitaxial planer type
For low-frequency amplification
I Features
G
High foward current transfer ratio hFE.
G
Low collector to emitter saturation voltage VCE(sat).
G
High emitter to base voltage VEBO.
G
Low noise voltage NV.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
M-A1 Package
6.9±0.1
2.5±0.1
(1.0)
(1.5)
(0.85)
0.45±0.05
0.55±0.1
(2.5)
21
3
R 0.7
R 0.9
(0.4)
3.5
±0.1
4.5
±0.1
4.1
±0.2
2.4
±0.2
1.25
±0.05
2.0
±0.2
1.0
±0.1
(1.5)
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
50
40
15
100
50
400
150
–55 ~ +150
Unit
V
mA
mW
C
I Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
NV
Conditions
VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10A, IE = 0
IC = 1mA, IB = 0
IE = 10A, IC = 0
VCE = 10V, IC = 2mA
IC = 10mA, IB = 1mA
VCB = 10V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100k, Function = FLAT
min
50
40
15
400
typ
0.05
120
80
max
100
1
2000
0.2
Unit
nA
A
V
MHz
mV
*h
FE Rank classification
Rank
R
S
T
hFE
400 ~ 800
600 ~ 1200 1000 ~ 2000
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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