参数资料
型号: 2SD1212-S
元件分类: 功率晶体管
英文描述: 12 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封装: TO-220AB, 3 PIN
文件页数: 1/4页
文件大小: 37K
代理商: 2SD1212-S
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
30V/12A High-Speed Switching Applications
Ordering number:ENN990C
2SB903/2SD1212
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1503TN (KT)/92098HA (KT)/D251MH/4067KI/3075KI No.990–1/4
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( ) : 2SB903
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2010C
[2SB903/2SD1212]
Applications
Suitable for relay drivers, high-speed inverters,
converters, and other general large-current switching
applications.
Features
Low collector-to-emitter saturation voltage :
VCE(sat)=(–)0.5V (PNP), 0.4V (NPN) max.
Large current capacity.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220AB
Tc=25C
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Continued on next page.
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相关PDF资料
PDF描述
2SB903-S 12 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SD1212Q 12 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1212S 12 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1212-S 12 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1212R 12 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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