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参数资料
| 型号： | 2SD1224 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 2-7B1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 149K |
| 代理商： | 2SD1224 |
2SD1224
2006-11-21
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)
2SD1224
Pulse Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
10
V
Collector current
IC
1.5
A
Base current
IB
0.15
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
BASE
EMITTER
COLLECTOR
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1224(Q) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SD1224_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Pulse Motor Drive, Hammer Drive Applications |
| 2SD1225 | 制造商:ROHM 制造商全称:Rohm 功能描述:2SD1225 |
| 2SD1225M | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1226 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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