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参数资料
| 型号： | 2SD1246-U |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | NP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 35K |
| 代理商： | 2SD1246-U |
2SB926 / 2SD1246
No.1030-1/4
Applications
Power supplies, relay drivers, lamp drivers, electrical equipment.
Features
Adoption of FBET, MBIT processes.
Low saturation voltage.
Large current capacity and wide ASO.
Specifications ( ) : 2SB926
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)30
V
Collector-to-Emitter Voltage
VCEO
(--)25
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)2
A
Collector Current (Pulse)
ICP
(--)5
A
Collector Dissipation
PC
0.75
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)20V, IE=0A
(--)0.1
A
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
A
DC Current Gain
hFE1VCE=(--)2V, IC=(--)100mA
100*
560*
hFE2VCE=(--)2V, IC=(--)1.5A, pulse
65
130
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)50mA
150
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(32)19
pF
Continued on next page.
* : The 2SB926 / 2SD1246 are classified by 100mA hFE as follows :
Rank
R
S
T
U
hFE
100 to 200
140 to 280
200 to 400
280 to 560
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN1030F
O1806EA SY IM TC-00000244 / O0303TN (KT) / 92098HA (KT) / 4077KI / 2275MW / D282KI, TS
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SB926 / 2SD1246
PNP / NPN Epitaxial Planar Silicon Transistors
Large-Current Driving Applications
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1247 | 制造商:Toshiba America Electronic Components 功能描述:Bipolar Junction Transistor, NPN Type, TO-92VAR |
| 2SD1247R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2.5A I(C) | TO-92VAR |
| 2SD1247S | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 2SD1247S-AE | 制造商:SANYO 功能描述:mom 25V 2.5A 140 to 280 MP Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 25V 2.5A TO-226 |
| 2SD1247T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2.5A I(C) | TO-92VAR |
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