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参数资料
| 型号： | 2SD1262AQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 242K |
| 代理商： | 2SD1262AQ |
Transistors
1
Publication date: March 2003
SJC00141BED
2SC3930
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1532
■ Features
Optimum for RF amplification of FM/AM radios
High transition frequency f
T
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
30
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 10 V, I
E
= 0
0.1
A
Forward current transfer ratio *
hFE
VCB = 10 V, IE = 1 mA
70
220
Transition frequency
fT
VCB = 10 V, IE = 1 mA, f = 200 MHz
150
250
MHz
Noise figure
NF
VCB
= 10 V, I
E
= 1 mA, f = 5 MHz
2.8
4.0
dB
Reverse transfer impedance
Zrb
VCB = 10 V, IE = 1 mA, f = 2 MHz
22
50
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 1 mA, f = 10.7 MHz
0.9
1.5
pF
(Common emitter)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Rank
B
C
hFE
70 to 140
110 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Unit: mm
2.1
±
0.1
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1.25
±
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±
0.1
0.9
±
0.1
0
to
0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5
10
1: Base
2: Emitter
3:Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: V
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1262P | 8 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD1263AP | 0.75 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1263Q | 0.75 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1263R | 0.75 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1265A | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1262AR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SD1262P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SD1262Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SD1262R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SD1263 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATS. TRANS. TO-220AB 400V .75A 35W BCE 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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