- 您现在的位置：买卖IC网 > PDF目录142673 > 2SD1263P (PANASONIC CORP) 0.75 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB PDF资料下载
参数资料
| 型号： | 2SD1263P |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.75 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 239K |
| 代理商： | 2SD1263P |
Power Transistors
1
Publication date: April 2003
SJD00179BED
2SD1263, 2SD1263A
Silicon NPN triple diffusion planar type
For power amplification
■ Features
High collector-base voltage (Emitter open) V
CBO
Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings T
a = 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD1263
VCBO
350
V
(Emitter open)
2SD1263A
400
Collector-emitter voltage 2SD1263
VCEO
250
V
(Base open)
2SD1263A
300
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
0.75
A
Peak collector current
ICP
1.5
A
Collector power
TC = 25°CPC
35
W
dissipation
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SD1263
VCEO
IC = 30 mA, IB = 0
250
V
(Base open)
2SD1263A
300
Base-emitter voltage
VBE
VCE = 10 V, IC = 1 A
1.5
V
Collector-emitter cutoff
2SD1263
ICES
VCE = 350 V, VBE = 01
mA
current (E-B short)
2SD1263A
VCE
= 400 V, V
BE
= 01
Collector-emitter cutoff
2SD1263
ICEO
VCE = 150 V, IB = 01
mA
current (Base open)
2SD1263A
VCE = 200 V, IB = 01
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 5 V, I
C
= 01
mA
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 0.3 A
40
250
hFE2
VCE = 10 V, IC = 1 A
10
Collector-emitter saturation voltage
VCE(sat)
IC
= 1 A, I
B
= 0.2 A
1
V
Transition frequency
fT
VCE = 5 V, IC = 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC = 1 A, IB1 = 0.1 A, IB2 = 0.1 A
0.5
s
Storage time
tstg
VCC
= 50 V
2.0
s
Fall time
tf
0.5
s
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE1
40 to 90
70 to 150
120 to 250
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1275P | 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SA720Q | 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA720R | 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA720S | 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SB1219Q | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1263Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 750MA I(C) | SOT-186 |
| 2SD1263R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 750MA I(C) | SOT-186 |
| 2SD1264 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1264/2SD1264A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SD1264. 2SD1264A - NPN Transistor |
| 2SD1264A | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type |
发布紧急采购，3分钟左右您将得到回复。