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参数资料
| 型号： | 2SD1266APQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封装： | SC-67, TO-220F-A1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 58K |
| 代理商： | 2SD1266APQ |
1
Power Transistors
Publication date: May 2002
SJD00283AED
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB0941 (2SB941) and 2SB941A (2SB941A)
s Features
High forward current transfer ratio h
FE which has satisfactory
linearity
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with one
screw
s Absolute Maximum Ratings T
a = 25°C
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Unit: mm
s Electrical Characteristics T
a = 25°C
Parameter
Symbol
Rating
Unit
Collector to base
2SD1266
VCBO
60
V
voltage
2SD1266A
80
Collector to
2SD1266
VCEO
60
V
emitter voltage
2SD1266A
80
Emitter to base voltage
VEBO
6V
Peak collector current
ICP
5A
Collector current
IC
3A
Collector power
TC = 25°CPC
35
W
dissipation
Ta = 25°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff
2SD1266
ICES
VCE = 60 V, VBE = 0
200
A
current
2SD1266A
VCE = 80 V, VBE = 0
200
Collector cutoff
2SD1266
ICEO
VCE = 30 V, IB = 0
300
A
current
2SD1266A
VCE = 60 V, IB = 0
300
Emitter cutoff current
IEBO
VEB = 6 V, IC = 0
1
mA
Collector to emitter
2SD1266
VCEO
IC = 30 mA, IB = 0
60
V
voltage
2SD1266A
80
Forward current transfer ratio
hFE1*
VCE = 4 V, IC = 1 A
70
250
hFE2
VCE = 4 V, IC = 3 A
10
Base to emitter voltage
VBE
VCE = 4 V, IC = 3 A
1.8
V
Collector to emitter saturation voltage
VCE(sat)
IC = 3 A, IB = 0.375 A
1.2
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC = 1 A, IB1 = 0.1 A, IB2 = 0.1 A,
0.5
s
Storage time
tstg
VCC = 50 V
2.5
s
Fall time
tf
0.4
s
*h
FE1 Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
Note:
Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in
the rank classification.
10.0
±0.2
5.5
±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.3
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
4.2
±0.2
φ 3.1±0.1
Note) The part number in the parenthesis shows conventional part number.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1266PQ | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 2SD1267R | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1267Q | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1267AQ | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1272Q | 2.5 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1266AQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | SOT-186 |
| 2SD1266AR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | SOT-186 |
| 2SD1266O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | SOT-186 |
| 2SD1266P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | SOT-186 |
| 2SD1266-P | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
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